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| 2SA1160 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
2SA1160 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain and Excellent hFE Linearity
z Low Saturation Voltage
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-10
-6
-2
900
139
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-1mA,IE=0
-20
V
V(BR)CEO IC=-10mA,IB=0
-10
V
V(BR)EBO IE=-1mA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.1
μA
IEBO
VEB=-6V,IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-0.5A
140
600
hFE(2)
VCE=-1V, IC=-4A
60
VCE(sat) IC=-2A,IB=-0.05A
-0.5
V
VBE
VCE=-1V, IC=-2A
-1.5
V
Cob
VCB=-10V,IE=0, f=1MHz
50
pF
fT
VCE=-1V,IC=-0.5A
140
MHz
CLASSIFICATION OF hFE (1)
RANK
A
RANGE
140-280
B
200-400
C
300-600
www.cj-elec.com
1
AC,J,Muna,r2,2001146
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