2SA1020 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA1020 TRANSISTOR (PNP)
TO-92MOD
FEATURES
Power Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-50
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current –Continuous
-2
A
P_C
Collector Power Dissipation
900
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF h_FE1
Rank
Range
Symbol Test conditions
V_(BR)CBO I_C =-100µA,I_E=0
V_(BR)CEO I_C =-10mA,I_B=0
V_(BR)EBO I_E=-100µA,I_C=0
I_CBO
V_CB=-50V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE1 V_CE=-2V,I_C=-0.5A
h_FE2 V_CE=-2V,I_C=-1.5A
V_CE(sat) I_C=-1A,I_B=-50mA
V_BE(sat) I_C=-1A,I_B=-50mA
f_T
V_CE=-2V,I_C=-500mA
C_ob
V_CB=-10V,I_E=0,f=1MHz
t_on
ts
V_CC=-30V,I_B1=-I_B2=-0.05A, I_C=-1A
tf
O
70-140
Min Typ Max Unit
-50
V
-50
V
-5
V
-1
µA
-1
µA
70
240
40
-0.5
V
-1.2
V
100
MHz
40
pF
0.1
μs
1
μs
0.1
μs
Y
120-240
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1
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