2SA1013 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1013 TRANSISTOR (PNP)
FEATURE
y High voltage
y Large continuous collector current capability
MARKING: 1013
SOT-89-3L
1. BASE
1
2. COLLECTOR
2 ₂₃
3. EMITTER
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted )
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_j
Junction Temperature
T_stg
R_θJA
Storage Temperature
Thermal Resistance from Junction to Ambient
Value
-160
-160
-6
-1
0.5
150
-55~+150
250
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
Test conditions
I_C=- 100μA , I_E=0
I_C= -1mA , I_B=0
I_E= -10μA, I_C=0
V_CB=-150 V , I_E=0
V_EB=-6V, I_C=0
V_CE=-5 V, I_C=- 200mA
I_C= -500m A, I_B= -50mA
I_C= -5 mA, V_CE=- 5V
V_CE= -5 V, I_C= -200mA
Min
-160
-160
-6
60
15
Unit
V
V
V
A
W
℃
℃
℃/W
Max
-1
-1
320
-1.5
-0.75
Unit
V
V
V
μA
μA
V
V
MHz
CLASSIFICATION OF h_FE
Rank
R
Range
60-120
www.cj-elec.com
O
100-200
1
Y
160-320
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