2SA1012 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,50V,25W)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SA1012 TRANSISTOR (PNP)
FEATURES
z High Current Switching Applications
z Low Collector Saturation Voltage
z High Speed Swithing Time
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction
to Ambient
Junction Temperature
Storage Temperature Range
Value
-60
-50
-5
-5
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃ /W
℃
℃
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
Storage Time
Fall Time
*Pulse test: t_p≤300μs, δ≤0.02.
CLASSIFICATION of h_FE(1)
Rank
Range
Symbol
Test conditions
Min
V_(BR)CBO I_C =-0.1mA, I_E=0
-60
V_(BR)CEO* I_C =-10mA, I_B=0
-50
V_(BR)EBO I_E=-100μA, I_C=0
-5
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE(1) V_CE=-1V, I_C=-1A
70
h_FE(2)* VCE=-1V, IC=-3A
30
V_CE(sat)* IC=-3A, IB=-150mA
V_BE(sat)* I_C=-3A, I_B=-150mA
f_T
V_CE=-4V, I_C=-1A
C_ob
V_CB=-10V, I_E=0, f=1MHz
t_on
V_CC=-30V,I_C=-3A,
t_s
I_B1=-I_B2=-0.15A
t_f
O
70-140
Typ Max Unit
V
V
V
-1
μA
-1
μA
240
-0.4
V
-1.2
V
60
MHz
170
pF
0.1
1.0
μs
0.1
Y
120-240
www.cj-elec.com
1
E,Nov,2014