2N7002X Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – MOSFET( N-Channel )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encap sulate MOSFETS
2N7002X
V_(BR)DSS
60 V
MOSFET( N-Channel )
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT-89-3L
1.GATE
2. DRAIN
3. SOURCE
FEA TURES
z High density cell design for low R_DS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
APPLICATION
z _{Load Switch for Portable Devices}
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate -Source Voltage
I_D
Drain Current
P_D
Power Dissipation
T_J
Junction Temperature
TSTG
Storage Temperature
R_θJA
Thermal Resistance from Junction to Ambient
www.cj-elec.com
1
Value
60
±20
115
500
150
-55~+150
250
Unit
V
V
mA
mW
℃
℃
℃/W
H,Sep,2016