2N7002V Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
2N7002V MOSFET (N-Channel)
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT-563
6
5
4
1
2
3
FEATURE
∙ Dual N-channel MOSFET
∙ Low on-resistance
∙ Low gate threshold voltage
∙ Low input capacitance
∙ Fast switching speed
∙ Low input/output leakage
MARKING
APPLICATION
z _{Load Switch for Portable Devices}
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
±20
115
150
150
-55-150
Unit
V
V
mA
mW
℃
℃
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1
G,Sep,2016