2N7002T Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2N7002T MOSFET (N-Channel)
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT-523
3
1. GATE
2. SOURCE
3. DRAIN
1
2
FEATURE
z High density cell design for low R_DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
K72
APPLICATION
z _{Load Switch for Portable Devices}
z _{DC/DC Converter}
Equivalent Circuit
K72= Device Code
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
V_DS
Drain-Source voltage
60
V
VGS
Gate-Source voltage
±20
V
I_D
Drain Current
P_D
Power Dissipation
115
mA
150
mW
R_{θJA Thermal Resistance from Junction to Ambient 833}
T_J
Junction Temperature
150
℃/W
℃
T_stg
Storage Temperature
-55~+150 ℃
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1
J,Sep,2016