2N7002M Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – MOSFET( N-Channel )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
GS
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_DS
Drain-Source voltage
I_D
Drain Current
P_D
Power Dissipation
R_θJA
Thermal Resistance. Junction to Ambient Air
T_J
Junction Temperature
T_stg
Storage Temperature
D
WBFBP-03B
(1.2×1.2×0.5) _TOP
unit: mm
GS
D
1. GATE
2. SOURCE
3. DRAIN
BACK
SG
Value
60
115
150
625
150
-55-150
Units
V
mA
mW
℃/W
℃
℃