2N7002KW Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V_(BR)DSS
 9
N-Channel MOSFET
R_DS(on)MAX
ȍ#9
ȍ#9
I_D
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE
z High density cell design for Low R_DS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected
M$5.,1*
APPLICATION
z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV
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Equivalent Circuit
MOSFET MAXIMUM RATINGS (T_a=25Я unless otherwise noted)
Symbol
V_DS
V_*S
I_D
I_DM
P_D
T_j
T_stg
R_șJA
Parameter
Drain-Source Voltage
*DWH-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance from Junction to Ambient
Value
60
±0
340
800
0.2
150
-55~+150
625
Unit
V
V
mA
mA
W
Я
Я
Я/W
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