2N7002KDW Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
2N7002KDW N-channel MOSFET
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
5.3Ω@4.5V
I_D
340mA
SOT-363
6
5
4
1
2
3
FEATURE
z High density cell design for Low R_DS（_on）
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected
MARKING
APPLICATION
z _{Load Switch for Portable Devices}
z _{DC/DC Converter}
Equivalent Circuit
72K
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source voltage
60
V
VGS
Gate-Source voltage
±20
V
ID
Drain Current
340
mA
PD
Power Dissipation
0.15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
RθJA
Thermal Resistance fromJunction to Ambient 833
℃ /W
www.cj-elec.com
1
H,Aug,2016