2N7002DW Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETs
2N7002DW Dual N-channel MOSFET
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
7Ω@5V
FEATURE
z High density cell design for low R_DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
I_D
115mA
SOT-363
6
5
4
1
2
3
APPLICATION
z _{Load Switch for Portable Devices}
z DC/DC Converter
MARKING
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VDS
Drain-Source voltage
60
VGS
Gate-Source voltage
±20
ID
Drain Current
115
PD
Power Dissipation
150
RÓ¨JA Thermal Resistance from Junction to Ambient 833
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
Unit
V
V
mA
mW
℃/W
℃
℃
www.cj-elec.com
1
I,Sep,2016