2N7002 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
2N7002 MOSFET (N-Channel)
V_(BR)DSS
60 V
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT-23
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE
z High density cell design for low R_DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_stg
Value
60
±20
0.115
0.225
556
150
-50 ~+150
www.cj-elec.com
1
Unit
V
V
A
W
℃/W
℃
J,Sep,2016