2N6517 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N6517 TRANSISTOR (NPN)
FEATURES
z Complement to 2N6520
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
350
350
6
0.5
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
DC current gain
h_FE ^*
Collector-emitter saturation voltage
V_CE(sat)*
Base-emitter saturation voltage
V_{BE (sat)} ^*
Base-emitter voltage
V_BE*
Transition frequency
f_T*
Collector output capacitance
C_ob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
I_C=0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.01mA,I_C=0
V_CB=250V,I_E=0
V_EB=5V,I_C=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=30mA
V_CE=10V, I_C=50mA
V_CE=10V, I_C=100mA
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
I_C=10mA,I_B=1mA
I_C=20mA,I_B=2mA
I_C=30mA,I_B=3mA
V_CE=10V, I_C=100mA
VCE=20V,IC=10mA,f=20MHz
V_CB=20V,I_E=0, f=1MHz
Min Typ Max Unit
350
V
350
V
6
V
0.05
μA
0.05
μA
20
30
30
200
20
200
15
0.3
V
1
V
0.75
V
0.85
V
0.9
V
2
V
40
200 MHz
6
pF
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1
C,Dec,2015