2N5172 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N5172 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier Transistor
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
25
5
500
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
Test conditions
I_C= 0.01mA,I_E=0
I_C=10mA,I_B=0
I_E=0.01mA,I_C=0
V_CB=25V,I_E=0
V_EB=5V,I_C=0
V_CE=10V, I_C=10mA
I_C=10mA,I_B=1mA
V_CE=10V, I_C=10mA
Min Typ Max Unit
25
V
25
V
5
V
0.1
μA
0.1
μA
100
500
0.25
V
0.5
1.2
V
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1
C,Dec,2015