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| 2N4402 Datasheet, PDF (1/3 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N4402 TRANSISTOR (PNP)
FEATURES
z General Purpose Amplifier Transistor
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= -0.1mA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1 μA
VCE=-1V, IC=-1mA
30
DC current gain
hFE*
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
50
50
150
VCE=-2V, IC=-500mA
20
Collector-emitter saturation voltage
VCE(sat)*
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
-0.4 V
-0.75 V
Base-emitter saturation voltage
VBE
*
(sat)
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
-0.75
-0.95 V
-1.3 V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
8.5 pF
Emitter input capacitance
Cib
VEB=-0.5V,IC=0, f=1MHz
30
pF
Transition frequency
fT
VCE=-10V,IC=-20mA, f=100MHz 150
MHz
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
www.cj-elec.com
1
C,Dec,2015
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