2N3828 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N3828 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier Transistor
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
40
3
0.1
300
416
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ
V_(BR)CBO I_C= 0.01mA,I_E=0
40
V_(BR)CEO I_C=1mA,I_B=0
40
V_(BR)EBO I_E=0.01mA,I_C=0
3
I_CBO
V_CB=60V,I_E=0
I_CEX
V_CE=30V,V_BE（_off）=3V
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=1V, I_C=12mA
30
V_CE(sat) I_C=50mA,I_B=5mA
V_{BE (sat)} I_C=50mA,I_B=5mA
f_T
VCE=20V,IC=10mA,f=100 MHz 360
Max
0.1
50
0.1
200
0.3
0.95
Unit
V
V
V
μA
nA
μA
V
V
MHz
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1
C,Dec,2015