1SS401 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
1SS401 Schottoky Barrier Diode
FEATURES
Low forward voltage
Lo w reverse current
Small total capacitance
SOT-323
MARKING: D9
1
3
2
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
V_RM
V_RRM
V_RWM
V_R
I_FM
I_O
Pd
R_θJA
T_J
T_STG
Limit
25
20
700
300
200
1000
125
-55~+150
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V _(BR)
V_F1
V_F2
V_F3
I_R
C_T
Min
20
Typ
0.16
0.22
0.38
Max
0.45
50
100
Unit
V
V
V
V
uA
pF
www.cj-elec.com
1
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=300mA
V_R=20V
V_R=0,f=1MHz
D,Oct,2015