1SS388 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (HGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS388 SCHOTTKY BARRIER DIODE
FEATURES
z Small pacakage
z Low forward voltage
z Low reverse current
SOD-523
MARKING: S3
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Peak reverse voltage
V_RM
45
DC reverse voltage
V_R
40
Maximum (peak) forward current
I_FM
300
Average forward current
I_O
Non-repetitive Peak Forward Surge
Current@t=8.3ms
IFSM
Power dissipation
P_D
100
1000
150
Junction temperature
T_j
125
Storage temperature
T_stg
-55~+150
Unit
V
V
mA
mA
mA
mW
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Total capacitance
www.cj-elec.com
Symbol Min
Typ Max Unit
V_F1
0.28
V
V_F2
0.36
V
V_F3
0.54 0.60
V
I_R
5
μA
C_T
18
25
pF
1
Conditions
I_F=1mA
I_F=10mA
I_F=50mA
V_R=10V
V_R=0,f=1MHZ
E,Mar,2015