1SS387 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS387 ^{High Speed Switching Diode}
FEATURES
z Small surface mounting type
z High speed
z High reliability with high surge current handing capability
MARKING: G
SOD-523
G
The marking bar indicates the cathode
G
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
V_RM
V_R
I_FM
I_O
I_FSM
Pd
R_θJA
T_j
T_STG
85
80
200
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t_rr
Min.
Typ. Max. Unit
Conditions
0.62
V I_F=1mA
0.75
V I_F=10mA
1.2
V I_F=100mA
0.1
μA V_R=30V
0.5
μA V_R=80V
3.0
pF V_R=0,f=1MHZ
4
ns V_R=6V,I_F=10mA,R_L=100Ω
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1
C,Mar,2015