1SS370 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
1SS370
SWITCHING DIODE
FEATURES
z High voltage, high speed switching applications
z Low forward voltage
z Fast reverse recovery time
z Small total capacitance
MAKING: F5
SOT-323
1
3
2
F5
F5
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
250
V
DC reverse voltage
V_R
200
V
Peak forward current
IFM
300
mA
Mean rectifying current
IO
100
mA
Non-Repetitive Peak Forward Surge current@t=8 .3ms
I_FSM
2.0
A
Junction temperature
T_j
150
℃
Storage temperature
T_stg
-55~+150
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V_F
I_R
C_T
t_rr
Min Typ
60
Max Unit
1
V
1.2 V
0.1 μA
1 μA
3.0 pF
ns
Conditions
I_F=10mA
I_F=100mA
V_R=50V
V_R=200V
V_R=0, f=1MHZ
V_R=6V,I_F=10mA,Irr=0.1*I_R
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1
C,Oct,2014