1SS344 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS344
SCHOTTKY BARRIER DIODE
FEATURES
 Low Forward Voltage
 Fast Reverse Recovery Time
 High Forward Current
APPLICATIONS
 High Speed Switching
MARKING: H9
SOT-23
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VR
DC Blocking Voltage
IO
Forward Continuous Current
IFM
Peak Forward Current
IFSM
Non-repetitive Peak Forward Surge Current@t=8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
20
500
1.5
5
200
500
125
-55~+150
Unit
V
mA
A
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=10V
VR=20V
IF=10mA
IF=100mA
IF=500mA
VR=0V, f=1MHz
IF= IR=50mA, VR=6V
Min Typ Max Unit
20
V
20
μA
100
0.35
0.43
V
0.55
120
pF
20
ns
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1
C,Oct,2015