1SS226 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS226 SWITCHING DIODE
FEATURES
z Low forward voltage
z Fast reverse recovery time
z Small total capacitance
MARKING: C3
C3
C3
SOT-23
1
3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings ,Single Diode @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
85
80
300
100
2
150
833
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V_(BR)
I_R= 100uA
80
Reverse voltage leakage current
I_R
V_R=80V
Forward voltage
V_F
I_F=100mA
Diode capacitance
Reverse recovery time
www.cj-elec.com
C_D
V_R=0V, f=1MHz
t _rr
I_F=10mA
1
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Max
Unit
V
0.5
uA
1.2
V
3
pF
4
ns
B,Aug,2014