1SS193 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS193
Switching Diode
FEATURES
y Low forward voltage
y Fast reverse recovery time
MARKING: F3
F3
F3
SOT-23
1
3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Conditions
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
V_(BR)
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t _rr
80
0.60
0.72
0.90 1.2
0.1
0.5
0.9
3.0
1.6
4.0
V I_R=100μA
V I_F=1mA
V I_F=10mA
V I_F=100mA
uA V_R=30V
uA V_R=80V
pF V_R=0,f=1MHz
ns I_F=I_R=10mA,I_rr=0.1×I_R
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1
B,Aug,2014