1N4448WT Datasheet, PDF (1/4 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1N4448WT FAST SWITCHING DIODE
FEATURES
 Small Package
 Low Reverse Current
 Fast Switching Speed
 Surface Mount Package Ideally Suited for Automatic Insertion
MARKING: T5
SOD-523
T5
The marking bar indicates the cathode
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Pd
R_θJA
T_j
T_STG
100
75
53
500
250
2.0
150
833
150
-55~+150
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse voltage
Reverse current
Symbol
V(BR)1
V(BR)2
IR
Test conditions
IR=5μA
IR=100μA
V_R =75V
VR=20V
IF=5mA
Forward voltage
IF=10mA
VF
IF=100mA
IF=150mA
Total capacitance
Ctot
VR=0V,f=1MHz
Reverse recovery time
trr
IF= IR =10mA, Irr=0.1*IR,RL=100Ω
www.cj-elec.com
1
Min Typ Max Unit
75
V
100
V
1
µA
25
nA
0.715
V
0.855
V
1
V
1.25
V
4
pF
4
ns
C,Mar,2015