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| 3DA882 Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-126 Plastic-Encapsulate Transistors | |||
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(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE*
VCE(sat)*
VBE(sat)
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=100µA,IE=0
IC=10mA,IB=0
IE=100µA,IC=0
VCB=40V,IE=0
VCE=30V,IB=0
VEB=6V,IC=0
VCE=2V, IC=1A
IC=2A,IB=0.2A
IC=2A,IB=0.2A
VCE=5V,IC=0.1A, f=10MHz
Min Typ Max Unit
40
V
30
V
6
V
10 μA
10 μA
10 μA
60
400
0.5
V
1.5
V
50
MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
60-120
O
100-200
Y
160-320
GR
200-400
www.cj-elec.com
2
C,Aug,2017
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