B772M Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-251-3L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
B772M ^{TRANSISTOR (PNP)}
FEATURES
Low Speed Switching
TO-251-3L
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3 BASE
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_Ó¨JA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
1.25
100
150
-55-150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V_(BR)CBO
I_C=-100μA ,I_E=0
-40
Collector-emitter breakdown voltage V(BR)CEO
I_C= -10mA , I_B=0
-30
Emitter-base breakdown voltage
V_(BR)EBO
I_E= -100μA,I_C=0
-6
Collector cut-off current
I_CBO
V_CB= -40V, I_E=0
Collector cut-off current
I_CEO
V_CE=-30V, I_B=0
Emitter cut-off current
I_EBO
V_EB=-6V, I_C=0
DC current gain
h_FE
V_CE= -2V, I_C= -1A
60
Collector-emitter saturation voltage
V_CE(sat)
I_C=-2A, I_B= -0.2A
Base-emitter saturation voltage
V_BE(sat)
I_C=-2A, I_B= -0.2A
Transition frequency
V_CE= -5V, I_C=-0.1A
f_T
f =10MHz
50
80
Max
-1
-10
-1
400
-0.5
-1.5
U nit
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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1
D,Feb,2016