A733 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733 TRANSISTOR (PNP)
SOT-23
FEATURE
z Collector-Base Voltage
z Complement to C945
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-150
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
f_T
C_ob
NF
Test conditions
I_C= -5uA,I_E=0
I_C= -1mA , I_B=0
I_E= -50uA, I_C=0
V_CB= -60 V , I_E=0
V_EB= -5 V , I_C=0
V_CE= -6 V, I_C= -1mA
I_C= -100mA, I_B=- 10mA
V_CE=-6V,I_C=-1.0mA
V_CE=-6V,I_C=-10mA
V_CB=-10V,I_E=0,f=1MH_Z
V_CE=-6V,I_C=-0.3mA,
Rg=10kΩ,f=100H_Z
Min
-60
-50
-5
120
-0.58
50
Typ Max Unit
V
V
V
-0.1 uA
-0.1 uA
475
-0.18 -0.3 V
-0.62 -0.68 V
MHz
4.5
7
pF
6
20
dB
CLASSIFICATION OF h_FE
Rank
Range
MARKING
www.cj-elec.com
L
120-220
CS
1
H
220-475
CA,JOucnt,2014