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| 3DG8051 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92L Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
3DG8051 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
z Complementary to 3CG8551
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
40
5
2
750
167
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.1mA,IC=0
VCB=50V,IE=0
VCE=40V,IB=0
VEB=5V,IC=0
VCE=2V, IC=0.1A
IC=1A,IB=0.1A
VCE=10V,IC=50mA, f=100MHz
Min Typ Max Unit
50
V
40
V
5
V
0.1 μA
2 μA
0.1 μA
100
320
1
V
150
MH
www.cj-elec.com
1
AC,J,Muna,r2,2001146
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