3DA5371 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DA5371 TRANSISTOR (NPN)
FEATURES
z Breakdown Voltage High
z Reverse Cut-off Current Small
z Saturation Voltage Low
z Power dissipation
P_CM : 1.5W (Ta=25.)
25 W (Tc= 25.)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
TO-220F
1. BASE
2. COLLECTOR
3. EMITTE
1₂₃
Value
Unit
180
V
160
V
6
V
1.5
A
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=1mA, I_E=0
180
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA, I_B=0
160
Emitter-base breakdown voltage
V_(BR)EBO I_E=100µA, I_C=0
6
Collector cut-off current
I_CBO
V_CB=180V, I_E=0
Emitter cut-off current
I_EBO
V_EB=6V, I_C=0
DC current gain
h_FE * VCE=5V, IC=200mA
60
Collector-emitter saturation voltage
V_CE(sat) * IC=500mA, IB=50mA
Transition frequency
f_T
V_CE=10V, I_C=50mA
50
*Pulse test: t_p≤300µS, δ≤0.02.
Typ Max Unit
V
V
V
10
µA
10
µA
240
1
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
O
60-140
R
100-240
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1
C,May,2016