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| 3DA5200C Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-3P Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
3DA5200C TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Current and Power Capacity
TO â 3P
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
15
3
42
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100µA,IE=0
IC=50mA,IB=0
IE=100µA,IC=0
VCB=120V,IE=0
VEB=5V,IC=0
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A,IB=800mA
VCE=5V, IC=7A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=1A
Min Typ Max Unit
120
V
120
V
5
V
5
μA
5
μA
55
160
35
3
V
1.5
V
360
pF
30
MHz
CLASSIFICATION OF hFE (1)
RANK
RANGE
R
55-110
O
80-160
www.cj-elec.com
1
B,Nov,2014
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