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| 3CG751 Datasheet, PDF (1/3 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-92LM Plastic Package | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
3CG751 TRANSISTOR (PNP)
TO-92MOD
FEATURE
y High power amplifier
y Low VCE(sat)
1.EMITTER
2.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
3.BASE
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-1.5
A
PC
Collector Power Dissipation
0.9
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55 to +150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
IC= -100µA, IE=0
-30
V(BR)CEO
IC= -1 mA , IB=0
-30
V(BR)EBO
IE= -100µA , IC=0
-5
ICBO
VCB= -30 V, IE=0
IEBO
VEB= -5V, IC=0
hFE
VCE=-2 V, IC= -500mA
100
VCE(sat)
IC= -1.5 A, IB= -30mA
fT
VCE= -5V, IC= -100mA
50
Cob
VCB=-10V,IE=0,f=1MHz
Max Unit
V
V
V
-0.1 µA
-0.1 µA
400
-2
V
MHz
80
pF
CLASSIFICATION OF hFE
Rank
Range
O
100-240
Y
150-400
www.cj-elec.com
1
C,Mar,2016
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