2SD2153 Datasheet, PDF (1/4 Pages) Rohm – High gain amplifier transistor (25V, 2A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2153 TRANSISTOR (NPN)
FEATURES
 Low saturation voltage
 Excellent DC current gain characteristics
MARKING: DN
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS(T_a=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector -Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Continuous Collector Current
ICP^*
Pulsed Collector Current
PC
Collector Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
TJ
Junction Temperature
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector capacitance
*Single pulse, P_W=10ms
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)*
f_T
C_ob
I_C=50μA,I_E=0
I_C=1mA,I_B=0
I_E=50μA, I_C=0
V_CB=20V,I_E=0
V_EB=5V,I_C=0
V_CE=6V,I_C=500mA
I_C=1A,I_B=20mA
V_CE=10V,I_C=10mA,f=100MHz
V_CB=10V, I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
U
560~1200
V
820~1800
Value
30
25
6
2
3
0.5
250
150
-55~+150
Unit
V
V
V
A
A
W
℃/ W
℃
℃
Min Typ Max Unit
30
V
25
V
6
V
0.5
μA
0.5
μA
560
2700
0.5
V
110
MHz
22
pF
W
1200~2700
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1
D,Nov,2015