 English |
|
|
|
|
|
|
|
| 2SD2137A Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220-3L Plastic-Encapsulate Transistors | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SD2137A TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Low Collector to Emitter Saturation Voltage VCE(sat)
z Allowing Automatic Insertion with Radial Taping
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
6
3
2
63
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Test conditions
IC=100µA,IE=0
IC=30mA,IB=0
IE=100µA,IC=0
VCB=80V,IE=0
VCE=60V,IB=0
VEB=6V,IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A,IB=0.375A
VCE=4V, IC=3A
VCE=5V,IC=0.2A, f=10MHz
Min Typ Max Unit
80
V
80
V
6
V
100 μA
100 μA
100 μA
70
320
10
1.2
V
1.8
V
30
MHz
CLASSIFICATION OF hFE(1)
RANK
Q
RANGE
70-150
P
120-250
O
160-320
www.cj-elec.com
1
B,Nov,2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese