2SD2012 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2012 TRANSISTOR (NPN)
FEATURES
z Audio frequency power amplifier applications
z High DC current gain
z Low saturation voltage
z High power dissipation
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER _{1 2 3}
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
60
60
7
3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
collector capacitance
Symbol Test conditions
V_(BR)CBO I_C=100μA , I_E=0
V_(BR)CEO I_C=50mA, I_B=0^1）
V_(BR)EBO I_E=100μA, I_C=0
I_CBO
V_CB=60V, I_E=0
I_EBO
V_EB=7V, I_C=0
h_FE1 V_CE=5V, I_C=0.5A
h_FE2
V_CE=5V, I_C=2A
V_CE(sat) I_C=2A, I_B=0.2A
V_BE
V_CE=5V, I_C=0.5A
f_T
V_CE=5V, I_C=0.5A
Cob V_CB=10V, I_E=0,f=1MHz
MIN TYP MAX UNIT
60
V
60
V
7
V
100 μA
100 μA
100
320
20
1
V
1
V
3
MHz
35
pF
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1
D,May,2016