PL-DD0-00-S30-C0 Datasheet, PDF (1/3 Pages) JDS Uniphase Corporation – 850 nm 2.5 G GaAs PIN Die

Communications componentS
850 nm 2.5 G GaAs PIN Die
PL-DD0-00-S30-C0
Key Features
• Topside connections for both contacts
• Large topside detection area
• Anti-reflective coating for 850 nm
• Monolithic insulating mounting surface
• Data rates from 622 Mbps to 2.5 Gbps
• Custom physical configuration and performance
specification tolerances are available
Benefits
• Large active area provides improved
alignment tolerances and ease of
barrel attachment
• Small die dimensions allow flexible
assembly options
The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed opti-
cal data communication applications. The topside illuminated device has a large
optical detection area, Ø=120 mm, for increased process tolerance during assembly.
The backside mounting surface is electrically isolated from the device electrodes for
simplified assembly. The PIN is designed for datacom applications using 850 nm
multi-mode 50/125 mm or 62.5/125 mm fiber.
NORTH AMERICA: 800 498-JDSU (5378)
worldwide: +800 5378-JDSU
WEBSITE: www.jdsu.com