MIXA450PF1200TSF Datasheet, PDF (6/6 Pages) IXYS Corporation – XPT IGBT Module

MIXA450PF1200TSF
Diode
800
600
I_F
400
[A]
200
T_J = 125°C
T_J = 25°C
500
I_f = 450 A
V_R = 600 V
T_VJ = 125°C
1.6
400
I_rr
3.3
[A]
4.7
300
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V_F [V]
Fig. 1 Typ. Forward current
versus V_F
200
3000
4000
5000
6000
di_F /dt [A/μs]
Fig. 2 Typ. reverse recovery
characteristics
100
R_g = 1.6
V_R = 600 V
80 _{TVJ = 125°C}
60
Q_rr
[μC]
40
20
500
R_g = 1.6
V_R = 600 V
T_VJ = 125°C
400
I_rr
[A]
300
0
0 200 400 600 800
I_F [A]
Fig. 4 Typ. reverse recovery
characteristics
200
0
200 400 600 800
I_F [A]
Fig. 5 Typ. reverse recovery
characteristics
0.10
550
10
500
t_rr
450
[ns]
400
I_f = 450 A
V_R = 600 V
T_VJ = 125°C
4.7
3.3
350
3000
4000
1.6
5000
6000
di_F /dt [A/μs]
Fig. 3 Typ. reverse recovery
characteristics
28
I_f = 450 A
V_R = 600 V
26 _{TVJ = 125°C}
24
E_rec
22
[mJ]
20
18
16
3000
4000
5000
di_F /dt [A/μs]
Fig. 6 Typ. recovery energy
E_rec versus -di/dt
0.08
Z_thJC
0.06
[K/W]
single pulse
0.04
0.02
0.00
0.001
0.01
0.1
t [s]
R_i
0.018
0.017
0.032
0.028
t_i
0.002
0.03
0.03
0.08
1
10
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a