MIXA225PF1200TSF Datasheet, PDF (6/6 Pages) IXYS Corporation – XPT IGBT Module

MIXA225PF1200TSF
Diode
400
300
I_F
200
[A]
100
T_VJ = 125°C
T_VJ = 25°C
250
I_F = 225 A
3.3
240 V_R = 600 V
T_VJ = 125°C
230
I_rr
220
[A]
210
5.0
6.8
200
10
preliminary
440
420 ₁₀
400
t_rr
380
[ns]
360
340
I_F = 225 A
V_R = 600 V
T_VJ = 125°C
6.8
5.0
3.3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V_F [V]
Fig. 1 Typ. forward current
versus V_F
190
2600 2800 3000 3200 3400
di_F /dt [A/μs]
Fig. 2 Typ. reverse recovery
characteristics
320
2600 2800 3000 3200 3400
di_F /dt [A/μs]
Fig. 3 Typ. reverse recovery
characteristics
60
V_R = 600 V
50 R_G = 3.3
T_VJ = 125°C
40
Q_rr
30
[μC]
20
10
300
250
I_rr
200
[A]
150
12.0
V_R = 600 V
R_G = 3.3
T_VJ = 125°C
11.5
E_rec
11.0
[mJ]
10.5
I_F = 225 A
V_R = 600 V
T_VJ = 125°C
0
0 100 200 300 400 500
I_F [A]
Fig. 4 Typ. reverse recovery
characteristics
100
0 100 200 300 400 500
I_F [A]
Fig. 3 Typ. reverse recovery
characteristics
10.0
2600 2800 3000 3200
di_F /dt [A/μs]
Fig. 6 Typ. recovery energy
E_rec versus di_F /dt
3400
0.16
0.12
Z_thJC
0.08
[K/W]
0.04
single pulse
0.00
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
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Data according to IEC 60747and per semiconductor unless otherwise specified
20121102b