IXYT20N120C3D1HV Datasheet, PDF (6/7 Pages) IXYS Corporation – 1200V XPTTM IGBT

Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
280
50
240
t_ri
t_d(on) - - - -
45
TJ = 150ºC, VGE = 15V
200
VCE = 600V
40
160
35
I C = 40A
120
30
80
I C = 20A
25
40
20
0
15
10
15
20
25
30
35
40
45
50
55
R_G - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
200
27
t_ri
t_d(on) - - - -
160
RG = 10Ω , VGE = 15V
25
VCE = 600V
120
I C = 40A 23
80
21
I C = 20A
40
19
0
17
25
50
75
100
125
150
T_J - Degrees Centigrade
IXYT20N120C3D1HV
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
200
24
t_ri
t_d(on) - - - -
160
RG = 10Ω , VGE = 15V
23
VCE = 600V
120
22
80
TJ = 150ºC
21
40
20
TJ = 25ºC
0
19
20 22 24 26 28 30 32 34 36 38 40
I_C - Amperes
Fig. 21. Maximum Peak Load Current vs. Frequency
80
70
Triangular Wave
60
50
40 ^{Square Wave}
TJ = 150ºC
TC = 75ºC
VCE = 600V
VGE = 15V
RG = 10Ω
D = 0.5
30
20
10
0
0.1
1
10
100
1000
f_max - KiloHertzs
FiFgig. .221. Maximum Transient Thermal Impedance (Diode)
1
0.1
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXYS REF: IXY_20N120C3(4L) 9-06-13-C