IXGH36N60A3D4 Datasheet, PDF (6/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
150
110
135 ^{t r}
t_d(on) - - - -
100
T_J = 125ºC, V_GE = 15V
120
V_CE = 400V
I _C = 60A
90
105
80
90
70
75
60
I _C = 30A
60
50
45
40
30
I _C = 15A
30
15
20
0
10
0 10 20 30 40 50 60 70 80 90 100 110 120
R_G - Ohms
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
60
25
55
t_r
t_d(on) - - - -
24
R_G = 5Ω , V_GE = 15V
50
V_CE = 400V
23
45
22
40
T_J = 125ºC
21
35
T_J = 25ºC
20
30
19
25
18
20
17
15
16
10
15
15 20 25 30 35 40 45 50 55 60
I_C - Amperes
IXGH36N60A3D4
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
65
27
60
26
55
25
50
I _C = 60A
24
45
40
t_r
t_d(on) - - - -
35
R_G = 5Ω , V_GE = 15V
V_CE = 400V
30
25
23
22
21
20
I _C = 30A
19
20
18
15
17
10
I _C = 15A
16
5
15
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_36N60A3(55) 07-03-08-A