GWM100-01X1 Datasheet, PDF (6/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

70
60
50
I_F = 90 A
60 A
40
30 A
30
20
V_R = 48 V
10
T_J = 125°C
0
200 400 600 800 1000 1200 1400 1600
-di_F /dt [A/µs]
Fig. 13 Reverse recovery time t_rr
of the body diode vs. di/dt
1.4
I_F = 90 A
1.2
60 A
1.0
30 A
0.8
0.6
0.4
V_R = 48 V
0.2
T_J = 125°C
0.0
200 400 600 800 1000 1200 1400 1600
-di_F /dt [A/µs]
Fig. 15 Reverse recovery charge Q_rr
of the body diode vs. di/dt
V_GS
0.1 V_GS
V_DS
I_D
0.9 I_D
0.1 I_D
t_d(on) t_r
0.9 V_GS
t
0.9 I_D
t_d(off)
0.1 I_{D t}
t_f
Fig. 17 Definition of switching times
IXYS reserves the right to change limits, test conditions and dimensions.
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GWM 100-01X1
60
I_F = 90 A
50
60 A
40
30 A
30
20
V_R = 48 V
10
T_J = 125°C
0
200 400 600 800 1000 1200 1400 1600
-di_F/dt [A/µs]
Fig. 14 Reverse recovery current I_RM
of the body diode vs. di/dt
180
160 ^VGS ^{= 0 V}
140
120
100
T_J = -25°C
80
25°C
125°C
60
150°C
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD [V]
Fig. 16 Source drain diode current I_F vs.
source drain voltage V_SD (body diode)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
GWM 160-0055X1
10
100
1000
10000
t [ms]
Fig. 18 Typ. thermal impedance junction to
heatsink Z_thJH with heat transfer paste
20110307e
6-6