MIXA80W1200TED Datasheet, PDF (5/7 Pages) IXYS Corporation – Six-Pack

MIXA80W1200TED
Transistor T1 - T6
140 V_GE = 15 V
120
100
I_C ⁸⁰
60
[A]
40
T_VJ = 25°C
T_VJ = 125°C
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE [V]
Fig. 1 Typ. output characteristics
140
120
100
I_{C 80}
[A] ₆₀
40
T_VJ = 125°C
20
T_VJ = 25°C
0
5 6 7 8 9 10 11 12 13
V_GE [V]
Fig. 3 Typ. tranfer characteristics
16
14
12
10
E₈
[mJ] ₆
R_G = 10 Ω
V_CE = 600 V
V_GE = ±15 V
T_VJ = 125°C
4
E_off
2
E_on
0
0 20 40 60 80 100 120 140 160
I_C [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
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140
V_GE = 15 V
13 V
11 V
17 V
120
19 V
100
I_C ⁸⁰
T_VJ = 125°C
[A] ⁶⁰
9V
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_CE [V]
Fig. 2 Typ. output characteristics
20
I_C = 75 A
V_CE = 600 V
15
V_GE
10
[V]
5
0
0
50 100 150 200 250 300
Q_G [nC]
Fig. 4 Typ. turn-on gate charge
10
9
E_off
8
E
[mJ] ₇
E_on
6
I_C = 75 A
V_CE = 600 V
V_GE = ±15 V
T_VJ = 125°C
5
8 10 12 14 16 18 20 22 24
R_G [Ω]
Fig. 6 Typ. switching energy vs. gate resistance
20100827d
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