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IXYH50N65C3H1 Datasheet, PDF (5/8 Pages) IXYS Corporation – Optimized for 20-60kHz Switching
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
1.8
Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
1.6
VCE = 400V
1.4
I C = 54A
1.2
1.0
0.8
0.6
I C = 36A
0.4
0.2
5
10
15
20
25
30
35
40
RG - Ohms
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
45
Fig. 15. Inductive Switching Energy Loss vs.
1.4
Junction Temperature
4.0
Eoff
Eon - - - -
1.2
RG = 5Ω , VGE = 15V
3.5
VCE = 400V
1.0
3.0
I C = 54A
0.8
2.5
0.6
2.0
0.4
1.5
I C = 36A
0.2
1.0
0.0
25
50
75
100
125
TJ - Degrees Centigrade
0.5
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
90
140
80
tfi
td(off) - - - -
130
RG = 5Ω , VGE = 15V
70
VCE = 400V
120
60
110
50
TJ = 150ºC
100
40
90
30
80
20
TJ = 25ºC
70
10
60
0
50
18
22
26
30
34
38
42
46
50
54
IC - Amperes
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IXYH50N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
3.6
Eoff
Eon - - - -
1.0
RG = 5Ω , VGE = 15V
3.0
VCE = 400V
0.8
TJ = 150ºC
2.4
0.6
1.8
TJ = 25ºC
0.4
1.2
0.2
0.6
0.0
0.0
18
22
26
30
34
38
42
46
50
54
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
80
Gate Resistance
480
tfi
td(off) - - - -
70
TJ = 150ºC, VGE = 15V
400
VCE = 400V
60
320
I C = 36A
50
240
40
160
I C = 54A
30
80
20
5
0
10
15
20
25
30
35
40
45
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
70
120
tfi
td(off) - - - -
60
RG = 5Ω , VGE = 15V
110
VCE = 400V
50
100
I C = 36A
40
90
30
80
I C = 54A
20
70
10
25
50
75
100
125
TJ - Degrees Centigrade
60
150