IXYH50N65C3D1 Datasheet, PDF (5/7 Pages) IXYS Corporation – Optimized for 20-60kHz Switching

Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
3.2
8
2.8
E_off
E_on - - - -
7
TJ = 150ºC , VGE = 15V
2.4
V_CE = 400V
6
2.0
I _C = 72A
5
1.6
4
1.2
3
0.8
2
I _C = 36A
0.4
1
0.0
5
0
10 15 20 25 30 35 40 45 50 55
R_G (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.8
7
2.4
E_off
E_on - - - -
RG = 5Ω , VGE = 15V
6
VCE = 400V
2.0
5
1.6
4
I C = 72A
1.2
3
0.8
2
0.4
1
I C = 36A
0.0
0
25
50
75
100
125
150
T_J (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
90
200
80
t_fi
t_d(off) - - - -
180
R_G = 5Ω , V_GE = 15V
70
VCE = 400V
160
60
140
50
T_J = 150ºC
120
40
100
30
80
TJ = 25ºC
20
60
10
40
15 20 25 30 35 40 45 50 55 60 65 70 75
I_C (A)
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IXYH50N65C3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4
6
E_off
E_on - - - -
2.0
RG = 5Ω , VGE = 15V
5
VCE = 400V
1.6
4
1.2
3
0.8
T_J = 150ºC
2
0.4
1
TJ = 25ºC
0.0
0
15 20 25 30 35 40 45 50 55 60 65 70 75
I_C (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
120
480
100
t_fi
t_d(off) - - - -
TJ = 150ºC, VGE = 15V
400
V_CE = 400V
80
320
60
I C = 72A
240
40
I _C = 36A
160
20
80
0
0
5 10 15 20 25 30 35 40 45 50 55
R_G (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
120
160
t_fi
t_d(off) - - - -
100
R_G = 5Ω , V_GE = 15V
140
VCE = 400V
80
120
60
I _C = 72A
100
40
I _C = 36A
80
20
60
0
40
25
50
75
100
125
150
T_J (ºC)