IXYH40N120C3D1 Datasheet, PDF (5/7 Pages) IXYS Corporation – 1200V XPTTM IGBT

Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
7
28
E_off
E_on
6
T_J = 150ºC , V_GE = 15V
V_CE = 600V
I C = 80A
24
5
20
4
16
3
12
2
8
I C = 40A
1
4
0
10
15
20
25
30
35
40
45
50
R_G - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5
E_off
E_on
4
RG = 10ΩVGE = 15V
VCE = 600V
I _C = 80A
0
55
20
16
3
12
2
8
1
I C = 40A
4
0
0
25
50
75
100
125
150
T_J - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240
220
t_fi
t_d(off)
200
R_G = 10Ω, V_GE = 15V
200
V_CE = 600V
160
TJ = 150ºC
180
120
160
80
140
40
T_J = 25ºC
120
0
100
20
30
40
50
60
70
80
I_C - Amperes
IXYH40N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
20
E_off
E_on
4
R_G = 10ΩV_GE = 15V
16
V_CE = 600V
T_J = 150ºC
3
12
2
8
TJ = 25ºC
1
4
0
0
20
30
40
50
60
70
80
I_C - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200
500
180
t_fi
t_d(off)
450
T_J = 150ºC, V_GE = 15V
160
VCE = 600V
400
140
350
I C = 40A
120
300
100
250
80
200
I _C = 80A
60
150
40
100
10
15
20
25
30
35
40
45
50
55
R_G - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160
170
t_fi
t_d(off)
140
R_G = 10Ω, V_GE = 15V
V_CE = 600V
120
160
I _C = 40A
150
100
140
80
I _C = 80A
130
60
120
40
25
50
75
100
125
T_J - Degrees Centigrade
110
150
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