IXTA200N085T Datasheet, PDF (5/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
RG = 5Ω
90
VGS = 10V
VDS = 43V
80
70
60
50
I D = 50A
40
I D = 25A
30
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
180
65
t_r
t_d(on) - - - -
160
TJ = 125ºC, VGS = 10V
60
140
VDS = 43V
55
120
50
I D = 50A
100
45
80
I D = 25A
40
60
35
40
30
20
25
4
6
8
10 12 14 16 18 20
R_G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
72
105
70
TJ = 25ºC ₁₀₀
68
95
66
64
t_f
t_d(off) - - - -
62
RG = 5Ω, VGS = 10V
60
VDS = 43V
58
90
TJ = 125ºC
85
80
75
70
56
TJ =125ºC 65
54
60
52
TJ = 25ºC 55
50
50
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I_D - Amperes
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IXTA200N085T
IXTP200N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
100
90
80
RG = 5Ω
70
VGS = 10V
VDS = 43V
60
TJ = 25ºC
50
40
TJ = 125ºC
30
25
30
35
40
45
50
I_D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
70
97
68
94
66
I D = 25A
91
64
88
62
t_f
t_d(off) - - - -
85
60
RG = 5Ω, VGS = 10V
82
VDS = 43V
58
79
56
76
I D = 50A
54
73
52
70
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
200
320
t_f
t_d(off) - - - -
180
TJ = 125ºC, VGS = 10V
290
VDS = 43V
160
260
140
230
120
I D = 50A
I D = 25A
200
100
170
80
140
60
110
40
80
4
6
8
10 12 14 16 18 20
R_G - Ohms
IXYS REF: T_200N085T (61) 11-20-06-A.xls