IXGK120N120A3 Datasheet, PDF (5/6 Pages) IXYS Corporation – GenX3 A3-Class IGBTs

Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
90
80
E_off
E_on - - - -
T_J = 125ºC , V_GE = 15V
70
V_CE = 960V
60
50
I _C = 100A
40
30
20
I _C = 50A
10
1
2
3
4
5
6
7
8
9
R_G - Ohms
36
32
28
24
20
16
12
8
4
10
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
90
20
80
E_off
E_on - - - -
R_G = 1Ω , V_GE = 15V
70
V_CE = 960V
18
I _C = 100A
16
60
14
50
12
40
10
30
8
20
6
I _C = 50A
10
4
0
2
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
1000
900
800
700
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
t_f
t_d(off) - - - -
R_G = 1Ω , V_GE = 15V
V_CE = 960V
1200
1100
1000
900
600
T_J = 125ºC
800
500
700
400
600
300
500
200
T_J = 25ºC
400
100
300
50 55 60 65 70 75 80 85 90 95 100
I_C - Amperes
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
90
20
80
E_off
E_on - - - -
18
R_G = 1Ω , V_GE = 15V
70 _{VCE = 960V}
16
60
14
50
T_J = 125ºC
12
40
10
30
8
20
6
T_J = 25ºC
10
4
0
2
50 55 60 65 70 75 80 85 90 95 100
I_C - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
900
850
t_f
t_d(off) - - - -
800
T_J = 125ºC, V_GE = 15V
V_CE = 960V
750
I _C = 50A
1500
1400
1300
1200
700
1100
650
600
I _C = 100A
1000
900
550
800
500
700
I _C = 50A
450
600
400
500
1
2
3
4
5
6
7
8
9 10
R_G - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
900
1150
800
t_f
t_d(off) - - - -
R_G = 1Ω , V_GE = 15V
700
V_CE = 960V
1050
950
600
850
I _C = 50A, 100A
500
750
400
650
300
550
200
450
100
350
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
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