IXGH17N100U1 Datasheet, PDF (5/6 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXGH 17N100U1
IXGH 17N100AU1
Fig.11 Maximum Forward Voltage Drop
100
80
60
T_J = 100°C
40
T_J = 150°C
20
T_J = 25°C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Voltage Drop - Volts
Fig.13 Junction Temperature Dependence
off I_RM and Q_r
1.4
1.2
1.0
0.8
I_RM
0.6
0.4
Q_r
0.2
0.0
0
40
80
120
160
T_J - Degrees C
Fig.15 Peak Reverse Recovery Current
50
T_J = 100°C
V_R = 540V
40
max.
I_F = 30A
30
20
typ.
I_F = 60A
10
I_F = 30A
I_F = 15A
0
200
400
600
di_F /dt - A/µs
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Fig.12 Peak Forward Voltage V_FR and
Forward Recovery Time t_FR
50
T_J = 125°C
I_F =37A
40
1000
V_FR
800
30
600
20
400
t_fr
10
200
0
0
0 100 200 300 400 500 600
di_F /dt - A/µs
Fig.14 Reverse Recovery Chargee
4
T_J = 100°C
V_R = 540V
3
2
1
typ.
I_F = 60A
I_F = 30A
I_F = 15A
max.
I_F = 30A
0
1
10
100
1000
di_F /dt - A/µs
Fig.16 Reverse Recovery Time
0.8
max.
I_F = 30A
0.6
0.4
0.2
T_J = 100°C
V_R = 540V
typ.
I_F = 60A
I_F = 30A
I_F = 15A
0.0
0
200
400
600
di_F /dt - A/µs