IXFK240N15T2 Datasheet, PDF (5/6 Pages) IXYS Corporation – GigaMOS TrenchT2 HiperFET Power MOSFET

Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
380
340
R_G = 1Ω , V_GS = 10V
V_DS = 75V
300
260
I _D = 240A
220
180
140
I _D = 120A
100
60
25
35
45
55
65
75
85
95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
210
t_r
t_d(on) - - - -
600
T_J = 125ºC, V_GS = 10V
180
V_DS = 75V
500
150
400
120
I _D = 240A
I _D = 120A
300
90
200
60
100
30
0
0
1
2
3
4
5
6
7
8
9
10
R_G - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
400
140
350
t_f
t_d(off) - - - -
130
R_G = 1Ω, V_GS = 10V
300
V_DS = 75V
120
T_J = 125ºC
250
110
200
100
150
90
100
80
50
T_J = 25ºC
70
0
60
60
80 100 120 140 160 180 200 220 240
I_D - Amperes
IXFK240N15T2
IXFX240N15T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
320
280
R_G = 1Ω , V_GS = 10V
V_DS = 75V
240
200
160
T_J = 125ºC
120
T_J = 25ºC
80
40
0
60
80
100 120 140 160 180 200 220 240
I_D - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
600
120
t_f
t_d(off) - - - -
500
R_G = 1Ω, V_GS = 10V
110
V_DS = 75V
400
100
300
I _D = 240A
90
200
I _D = 120A
80
100
70
0
60
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
700
600
t_f
t_d(off) - - - -
600
T_J = 125ºC, V_GS = 10V
500
V_DS = 75V
500
400
400
I _D = 240A
I _D = 120A ₃₀₀
300
200
200
100
100
0
1
2
3
4
5
6
7
8
9
10
R_G - Ohms
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