DPG60IM300PC Datasheet, PDF (5/5 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

DPG60IM300PC
Fast Diode
120
0.7
100
80
I_{F 60}
[A]
40
T_VJ = 150°C
0.6
Qrr ^0.5
I_F = 120 A
60 A
30 A
[μC] 0.4
20
25°C
0.0 0.4 0.8 1.2 1.6 2.0
VF [V]
Fig. 1 Forward current
I_F versus V_F
0.3
0.2
0
T_VJ = 125°C
V_R = 200 V
200
400
600
-di_F /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q_rr versus -di_F /dt
20
18
16
14
I_RM
12
[A] ₁₀
I_F = 120 A
60 A
30 A
8
6
T_VJ = 125°C
V_R = 200 V
4
0
200
400
600
-di_F /dt [A/μs]
Fig. 3 Typ. reverse recovery current
I_RM versus -di_F /dt
1.4
1.2
1.0
K_f 0.8
0.6
I_RM
0.4
0.2 ^Qrr
0
40
80 120 160
T_VJ [°C]
Fig. 4 Typ. dynamic parameters
Q_rr, I_RM versus T_VJ
80
70
t_rr
60
[ns]
50
I_F = 120 A
60 A
30 A
T_VJ = 125°C
V_R = 200 V
1000
t_fr
900
800
700
tfr
600
[ns]
500
400
300
T_VJ = 125°C
V_R = 200 V
I_F = 60 A
10
9
8
V_FR
7
V_FR
6
[V]
5
4
3
40
0
200
400
600
-di_F /dt [A/μs]
Fig. 5 Typ. reverse recov. time
t_rr versus -di_F /dt
200
0
2
200
400
600
-di_F /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
V_FR & time t_fr versus di_F /dt
16
1.0
14
I_F = 120 A
60 A
12
30 A
10
E_rec
8
[μJ] 6
Z_thJC
[K/W]
4
2
T_VJ = 125°C
V_R = 200 V
0.1
0
200
400
600
10⁰
10¹
10²
10³
10⁴
-di_F /dt [A/μs]
t [ms]
Fig. 7 Typ. recovery energy
Fig. 8 Transient thermal impedance junction to case
E_rec versus -di_F /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a