DNA30E2200PA Datasheet, PDF (5/5 Pages) IXYS Corporation – Single Diode

DNA30E2200PA
Rectifier
60
300
10³
V_R = 0 V
40
I_F
250
I_FSM
T_VJ = 45°C
[A]
20
[A]
200
T_VJ = 150°C
T_VJ = 150°C
T_VJ = 125°C
T_VJ = 25°C
0
0.5
1.0
1.5
2.0
V_F [V]
Fig. 1 Forward current versus
voltage drop per diode
50 Hz, 80% V_RRM
150
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
I²t
[A²s]
T_VJ = 45°C
T_VJ = 150°C
10²
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I²t versus time per diode
50
40
30
P_tot
dc =
1
0.5
0.4
0.33
0.17
0.08
20
[W]
10
R_thKA =
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
40
30
I_F(AV)M
20
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
0 25 50 75 100 125 150 175 200
I_F(AV)M [A]
T_amb [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
0.8
0
0 25 50 75 100 125 150 175 200
T_C [°C]
Fig. 5 Max. forward current versus
case temperature
0.6
Z_thJC
0.4
[K/W]
0.2
0.0
1
10
100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
Constants for Z_thJC calculation:
i R_thi (K/W)
t_i (s)
1 0.03
0.0003
2 0.072
0.0065
3 0.131
0.027
4 0.367
0.105
5 0.1
0.8
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c